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| TN2124 TN2124 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 240V RDS(ON) (max) 15 VGS(th) (max) 2.0V Order Number / Package TO-243AA** TN2124N8 TO-236AB* TN2124K1 Product marking for SOT-23: N1C where = 2-week alpha date code * Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. ** Prodcut supplied on 2000 piece carrier tape reels. Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches D Package Options Drain Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 08/30/99 G Gate BVDSS BVDGS 20V Source D S TO-236AB (SOT-23) top view TO-243AA (SOT-89) -55C to +150C 300C Note: See Package Outline section for dimensions. Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For complete liability information covering this and other Supertex products, refer to the Supertex 1998 Databook. 1 TN2124 Thermal Characteristics Package TO-236AB TO-243AA ID (continuous)* 134mA 230mA ID (pulsed) 250mA 1.1A Power Dissipation @ TA = 25C 0.36W 1.6W C/W 200 15 jc C/W 350 78 ja IDR* 134mA 230mA IDRM 250mA 1.1A * ID (continuous) is limited by max rated Tj. Mounted on FR5 board. 25mmx25mmx1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current 0.1 Min 240 0.8 2.0 -5.5 100 1 100 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Notes: 1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Typ Max Unit V V mV/C nA A A mA Conditions ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA ID = 1mA, VGS = VDS VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 4.5V, VDS = 25V VGS = 3V, ID = 25mA VGS = 4.5V, ID = 120mA ID = 120mA, VGS = 4.5V VDS = 25V, ID = 120mA VGS = 0V, VDS = 25V, f = 1MHz ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 140 30 15 0.7 100 170 38 9 3 4 2 7 9 50 15 5 7 5 10 12 1.8 400 1.0 %/C m pF ns V ns Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 2 VDD = 25V ID = 140mA RGEN = 25 ISD = 120mA, VGS = 0V ISD = 120mA, VGS = 0V VDD RL OUTPUT D.U.T. TN2124 Typical Performance Curves Output Characteristics 2.0 1.0 Saturation Characteristics 1.6 0.8 VGS = 10V 8V 6V 4V 3V ID (amperes) 8V 6V 0.8 4V ID (amperes) 1.2 VGS = 10V 0.6 0.4 3V 0.4 2V 0 0 10 20 30 40 50 0 0 2 4 6 8 10 0.2 2V VDS (volts) Transconductance vs. Drain Current 1.0 VDS= 25V SOT-89 0.8 1.6 2.0 VDS (volts) Power Dissipation vs. Temperature GFS (siemens) 0.4 -55C PD (watts) 0.6 1.2 0.8 0.2 TA= 125C 0 0 0.2 0.4 0.6 0.8 1.0 25C 0.4 SOT-23 0.0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 10 TA= 25C 1.0 TA ( C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 SOT-23 T A = 25C P D = 0.36W SOT-89 (pulsed) ID (amperes) 1.0 SOT-23 (pulsed) SOT-89 0.1 0.6 0.4 SOT-89 TA = 25C PD = 1.6W 0.2 SOT-23 (DC) 0.01 0 10 100 1000 0 0.001 0.01 0.1 1 10 VDS (volts) tp (seconds) 3 TN2124 Typical Performance Curves BVDSS Variation with Temperature 50 1.1 40 On-Resistance vs. Drain Current VGS = 3V BVDSS (normalized) RDS(ON) (ohms) 30 1.0 20 VGS = 4.5V 10 0.9 0 -50 0 50 100 150 0 0.2 0.4 0.6 0.8 1.0 Tj ( C) Transfer Characteristics 1.0 1.4 0.8 ID (amperes) VTH and RDS Variation with Temperature 2.0 RDS(ON) @ 4.5V, 120mA 1.6 125C 25C 1.2 1.2 1.0 0.8 0.8 0.6 0.4 VDS = 25V 0.2 0.6 0 0 2 4 6 8 10 -50 0 VGS(th) @ 1mA 0.4 0 50 100 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 10 Tj ( C) Gate Drive Dynamic Characteristics 8 75 C (picofarads) VGS (volts) f = 1MHz 50 6 4 CISS 25 VDS = 10V 100pF VDS = 40V 2 CRSS 0 0 10 20 COSS 0 30 40 0 32 pF 0.2 0.4 0.6 0.8 1.0 VDS (volts) QG (nanocoulombs) 08/30/99 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) VGS(th) (normalized) TA = -55C ID (amperes) |
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